Authors: E.K. Chan, K. Garikipati, Z.K. Hsiau and R.W. Dutton
Affilation: Stanford University, United States
Pages: 180 - 185
Keywords: electrostatically-actuated beams, capacitancevoltage, contact, simulation accuracy
Detailed 2D electromechanical simulations of electrostatically-actuated beams reveal phenomena not captured by 1D or quasi-2D simulations. The behavior of the beam when in contact with a dielectric layer is studied. Capacitance-voltage measurements are used to extract material properties and explore surface phenomena such as charge accumulation, stiction and surface roughness. Monte Carlo simulations reveal the limits of simulation accuracy due to statistical distributions of input parameters.