Authors: A.M. Ionescu, N. Mathieu and A. Chovet
Affilation: LPCS/ENSERG, France
Pages: 127 - 132
Keywords: MAGFET, silicon, offset, sensitivity, analytical models
In this paper both offset and absolute/relative sensitivities of MAGFET (MAGnetic Field Effect Transistor) are investigated as functions of the drain and gate voltages. Accurate physical and analytical models are developed allowing the identification of optimum operation criteria, in terms of offset reduction and/or sensitivity maximization.