Drain and Gate Voltage Influences on MAGFET Offset and Sensitivity: Modeling and Experiment

	MSM 98 Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems Chapter 3: Modeling
	Drain and Gate Voltage Influences on MAGFET Offset and Sensitivity: Modeling and Experiment
Authors:	A.M. Ionescu, N. Mathieu and A. Chovet
Affilation:	LPCS/ENSERG, FR
Pages:	127 - 132
Keywords:	MAGFET, silicon, offset, sensitivity, analytical models
Abstract:	In this paper both offset and absolute/relative sensitivities of MAGFET (MAGnetic Field Effect Transistor) are investigated as functions of the drain and gate voltages. Accurate physical and analytical models are developed allowing the identification of optimum operation criteria, in terms of offset reduction and/or sensitivity maximization.
	View PDF of paper
ISBN:	0-96661-35-0-3
Pages:	678
Special:	3 CD Set — 15% off with Free Shipping
Up