Nano Science and Technology Institute
MSM 98
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
 
Chapter 3: Modeling
 

Drain and Gate Voltage Influences on MAGFET Offset and Sensitivity: Modeling and Experiment

Authors:A.M. Ionescu, N. Mathieu and A. Chovet
Affilation:LPCS/ENSERG, FR
Pages:127 - 132
Keywords:MAGFET, silicon, offset, sensitivity, analytical models
Abstract:In this paper both offset and absolute/relative sensitivities of MAGFET (MAGnetic Field Effect Transistor) are investigated as functions of the drain and gate voltages. Accurate physical and analytical models are developed allowing the identification of optimum operation criteria, in terms of offset reduction and/or sensitivity maximization.
Drain and Gate Voltage Influences on MAGFET Offset and Sensitivity: Modeling and ExperimentView PDF of paper
ISBN:0-96661-35-0-3
Pages:678
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