Nano Science and Technology Institute
MSM 98
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
 
Chapter 3: Modeling
 

Modeling of Strain in Boron-Doped Silicon Cantilevers

Authors:H.A. Rueda and M.E. Law
Affilation:University of Florida, US
Pages:94 - 99
Keywords:finite element method, boron, strain, cantilevers, residual stress
Abstract:A finite element method is developed to compute the mechanical strain resulting from boron doping in silicon. This technique is then applied to the bending of borondoped silicon cantilevers. The silicon cantilever is modeled as an isotropic eiastic material. A lattice mismatch paramerer due to the substitutional boron is used as the strain source. Quaiitative agreement is resulted with experiments in the iiterature for varying thickness cantilevers.
Modeling of Strain in Boron-Doped Silicon CantileversView PDF of paper
ISBN:0-96661-35-0-3
Pages:678
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