Nano Science and Technology Institute
MSM 98
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Chapter 3: Modeling

A Global Finite Element Model for Improving the Thermo-Mechanical Reliability of IBGTs Modules

Authors:Y. Tronel and W. Fichtner
Affilation:Swiss Federal Institute of Technology Z├╝rich, CH
Pages:88 - 93
Keywords:IBGTs, damage, pure aluminium, finite element model
Abstract:Insulated Gate Bipolar Transistors (IGBT's) are widely used in the automotive industry as high power current switches. They are currently being introduced into traction applications (locomotives, trams, metros, etc.) where high reliability is extremely important. Modern locomotives have a lifetime of about 30 years during which they should not fail. Due to the complexity of the modules as mechanical systems and as electric circuits, it is of prime importance to select and set up the most suitable models which allow to extract valuable data. Accordingly, this work describes the models and associated equations which appear to be necessary to carry out failure analysis. It includes a general stationary fully coupled electro-thermomechanical analysis which is actually part of the commercial release of the software SOLIDIS-ISE. More specific features tailored to IGBTs failure analysis are currently implemented. It comprises thermal transient effects and plasticity/damage based models for the stress analysis. Finally, a numerical example showing the damage distribution at a wire bond connection is presented.
A Global Finite Element Model for Improving the Thermo-Mechanical Reliability of IBGTs ModulesView PDF of paper
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