Nano Science and Technology Institute
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems

Chapter 3:

Modeling

-A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation
 G. Kaiblinger-Grujin and S. Selberherr
 Vienna Technical University, Austria
-PSDesigner: A Framework for Transistor Co-Optimization
 R. Burch, S. Saxena, P.K. Mozumder, K. Vasanth, J. Davis and S. Rao
 Texas Instruments, Inc., U.S.A.
-Residual Stresses/Strains Analysis of MEMS
 T-R. Hsu and N. Sun
 San Jose State University, U.S.A.
-A Global Finite Element Model for Improving the Thermo-Mechanical Reliability of IBGTs Modules
 Y. Tronel and W. Fichtner
 Swiss Federal Institute of Technology Zürich, Switzerland
-Modeling of Strain in Boron-Doped Silicon Cantilevers
 H.A. Rueda and M.E. Law
 University of Florida, U.S.A.
-Adaptive Hierarchical Finite Element Modeling of Dopant Diffusion
 A. Bose and C.S. Rafferty
 Bell Laboratories, U.S.A.
-3-D Electrothermal Model of Multifinger, High-Power HBTs
 F. Dhondt, J. Barrette, P.A. Rolland and S. Delage
 IEMN, France
-Fault Model Generation for MEMS
 A. Kolpekwar, C Kellen and R.D. Blanton
 Carnegie Mellon University, U.S.A.
-A Floating Random-Walk Method for Efficient RC Extraction of Complex IC-Interconnect Structures
 R.B. Iverson and Y.L. LeCoz
 Random Logic Corporation, U.S.A.
-Yield Prediction Under Non-Standard Data Distributions
 S. Rao, S. Saxena, P. Apte, P.K. Mozumder, J. Davis, R. Burch and K. Vasanth
 Texas Instruments, Inc., U.S.A.
-Drain and Gate Voltage Influences on MAGFET Offset and Sensitivity: Modeling and Experiment
 A.M. Ionescu, N. Mathieu and A. Chovet
 LPCS/ENSERG, France
-Reliability Issues in Microelectromechanical Systems
 X.J.R. Avula
 University of Missouri-Rolla, U.S.A.
ISBN:0-96661-35-0-3
Pages:678
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