Authors: S.B. Bollepalli, M. Khan and F. Cerrina
Affilation: UW-Madison, United States
Pages: 53 - 58
Keywords: Angular Spectrum, Diffraction, Defects, Fluorescence, X-ray Lithography.
In the fabrication of semiconductor devices using lithography, the modeling of the exposure process is very often needed. The elements of a typical exposure system from a modeling perspective comprise of a radiation source, a patterned mask and a wafer coated with a photo-resist. The diffracted image of the mask pattern exposes the photo-resist after propagating through a distance termed mask-to-lvafer gap. The exposed wafer is later on chemically developed to form a semiconductor device. In short, the electric field propagates through a series of regions (layers) with various materials and topographies (structures) before forming an image on the wafer. In this paper we describe a computational algorithm based on angular spectrum propagation approach to model image formation in layered structures with particular emphasis to X-ray Lithography (XRL). Several illustrative examples will be presented.