MSM 98
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems

Bulk and Topography Processing Chapter 2

Molecular Dynamics (MD) Simulations of Reactive Ion Etching (RIE) of Silicon by Cl, Cl2, Br and Br2 Cations

Authors: S.M. Valone, D.E. Hanson and J.D. Kress

Affilation: Los Alamos National Laboratory, United States

Pages: 29 - 34

Keywords: molecular dynamics simulations, thermochemistry, reactive ion etching of silicon, CL, CL2, Br and Br2 cations.

Abstract:
Simulations of Cl plasma etch of Si surfaces with MD techniques agree reasonably well with the available experimental information on yields and surface morphologies. This information has been supplied to a Monte Carlo etch profile [25] resulting in substantial agreement with comparable inputs provided through controlled experiments. To the extent that more recent measurements of etch rates are more reliable than older ones, preliminary MD simulations using bond-order corrections to the atomic interactions between neighboring Si atoms on the surface improves agreement with experiment through an increase in etch rate and improved agreement with XPS measurements of surface stoichiometry. Thermochemical and geometric analysis of small Si-Br molecules is consistent with the current notions of the effects of including brominated species in etchant gases.

Molecular Dynamics (MD) Simulations of Reactive Ion Etching (RIE) of Silicon by Cl, Cl2, Br and Br2 Cations

ISBN: 0-96661-35-0-3
Pages: 678