Nano Science and Technology Institute
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems

Chapter 2:

Bulk and Topography Processing

-Molecular Dynamics (MD) Simulations of Reactive Ion Etching (RIE) of Silicon by Cl, Cl2, Br and Br2 Cations
 S.M. Valone, D.E. Hanson and J.D. Kress
 Los Alamos National Laboratory, U.S.A.
-Computer Aided Mask-Layout for Bulk Etch Fabrication
 M.K Long, J.W. Burdick and E.K. Antonsson
 California Institute of Technology, U.S.A.
-A Semi-Empirical Resist Dissolution Model for Sub-micron Lithographies
 M. Khan, S.B. Bollepalli and F. Cerrina
 UW-Madison, U.S.A.
-A Method of MOSFET Dopant Profile Prediction and its Use in Transistor Design
 M. Kulkarni, K. Vasanath, J. Davis, S. Saxena and G. Pollack
 Texas Instruments, Inc., U.S.A.
-Modeling Image Formation in Layered Structures: Application to X-ray Lithography
 S.B. Bollepalli, M. Khan and F. Cerrina
 UW-Madison, U.S.A.
-Numerical Simulation for the Sacrificial Release of MEMS Square Diaphragms
 W.J. Li, J.C. Shih, J.D. Mai, C-M. Ho, J. Liu and Y-C. Tai
 UC-Los Angeles, U.S.A.
-Three-Dimensional Simulation of Bulge Formation in Contact Hole Metalization
 W. Pyka and S. Selberherr
 Technical UniversityVienna, Austria
ISBN:0-96661-35-0-3
Pages:678
Special:3 CD Set — 15% off with Free Shipping
Up
© Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map