Nano Science and Technology Institute
MSM 98
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Chapter 14: Applications: Hall Effect, Storage

Sensitivity Calculation Model Using the Finite-Difference Method

Authors:C. Mueller, G. Scheinert and H. Uhlmann
Affilation:Technical University of Ilmenau, DE
Pages:649 - 654
Keywords:Sensitivity analysis, tolerance analysis, finite differences, magnetostatics, global field quantities
Abstract:The paper describes an approach to general-purpose design sensitivity analysis for electromagnetic devices. Micro system technology often requires the assessment of manufacturing techniques or effects of tolerances. Emphasis is therefore put on the adaptability to different requirements, depending on desired accuracy, computational effort and significance. By introducing a distributed sensitivity function, the effect of small contour distortions can be described. The design sensitivity is based on a magnetic double-layer model. It is shown that sensitivity can be expressed in terms of virtual anti-parallel double-layer currents, flowing in a movable contour. The sensitivity is explicitly derived for two-dimensional coordinate systems using the finite-difference method within a commercially available field calculation program. The proposed method is demonstrated by means of an example of two magnetic planes facing each other.
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