Nano Science and Technology Institute
MSM 98
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Chapter 12: Applications: Pressure, Actuation, Navigation

An Integrated Pressure Sensor with High Performance

Authors:B.N. Lee, K.N. Kim, H.D. Park and S-M Shin
Affilation:Korea Electronics Technology Institute, KR
Pages:575 - 579
Keywords:pressure sensor. calibration, temperature compensation, ion-implanted resistors
Abstract:A bipolar integrated pressure sensor had been designed and simulated. The ion-implanted resistors with temperature coeffcient of 1700pm/?C and 4700ppm/?C were used for calibration and temperature compensation. Ion-implanted resistors are simultaneouslv fabricated with base and piezoresistors. Simulation results of designed pressure sensor showed that maximum stress was l:90kPa and maximum deflection was 4.95x lO,m. The pressure sensitivitv was 240V/V.kPa. Simulation results of calibrated and temperature compensated circuits showed that the offset voltage was 0.4V at 10kPa and full scale span was 4.6:V at llkPa. The temperature coefficient of full scale span was 46 ppm/?C at the temperature range of -10 to 70oC.
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