Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 9: Nanoscale Modeling of Front-End Processing in Silicon

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Authors:N. Strecker, V. Moroz and M. Jaraiz
Affilation:Avant!, US
Pages:462 - 465
Keywords:Monte Carlo, diffusion, process, simulation, TCAD
Abstract:Advantages and disadvantages of the alternative approaches to the dopant diffusion simulation are discussed. Complementary use of the Monte Carlo and continuum diffusion models is suggested. Application of the integrated commercially available process simulation tools DADOS (atomistic) and Taurus Process (continuum) to the advanced sub-100 nm devices is demonstrated. The following four application areas for the Monte Carlo diffusion model are discussed: 1. Determining model parameters for the continuum process simulation. 2. Complete Monte Carlo path from implantation to diffusion for investigating statistical device variations. 3. Usage of DADOS integrated into Taurus Process for the accurate diffusion simulation in the entire simulation domain or a small window in the most critical device part. 4. Exploration of the new materials and species for the novel devices and process steps.
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