Authors: Y. Hiwatari, Y. Kaneko, K. Ohara and T. Murakami
Affilation: Kanazawa University, Japan
Pages: 430 - 433
Keywords: Monte Carlo simulation, thin film, voids, via filling
In this paper, we study the void formation during via ﬁlling as a model of copper damascene plating for LSI interconnects. We developed a new model for crystal growth which enables us to study the void structure in relation to the surface structure depending upon the deposition conditions. Using this model which we call Solid-by-Solid model, we performed the kinetic Monte Carlo simulations of ﬁlling V-shaped and ﬂat-bottomed grooves to examine the surface and void structures during the surface growth. It is found that small voids appear successively in the ﬁlm, being aligned to the growth direction as the V-shaped groove is ﬁlled with deposited atoms. In ﬁlling the ﬂat-bottomed groove, on the other hand, large voids appear in the middle of the groove which are elongated to the growth direction. The mechanism of ﬁlling and void formation and its dependence on the shape of the initial substrate are discussed.