Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 8: Process Modeling

The Level-Set Method for Modeling Epitaxial Growth

Authors:C. Ratsch, M. Petersen and R.E. Caflisch
Affilation:University of California-Los Angeles, US
Pages:418 - 421
Keywords:level-set, epitaxial growth, aggregation phenomena
Abstract:A level-set model for the simulation of epitaxial growth is described. In this model, the motion of island boundaries of discrete atomic layers is determined by the time evolution of a continuous level-set funciton psi. The adatom concentration is treated in a mean field manner. Thus, fast events (such as diffusion or detachment of adatoms from island boundaries) can be described without extra computational cost. We discuss results for the scaled island size distributions in the submonolayer aggregation regime and compare them to those obtained from atomistic KMC simulations and experiments. The level-set method can naturally be extended to describe multilayer growth. Roughening and coarsening of the surface will be discussed.
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