Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Process Modeling Chapter 8

The Level-Set Method for Modeling Epitaxial Growth

Authors: C. Ratsch, M. Petersen and R.E. Caflisch

Affilation: University of California-Los Angeles, United States

Pages: 418 - 421

Keywords: level-set, epitaxial growth, aggregation phenomena

Abstract:
A level-set model for the simulation of epitaxial growth is described. In this model, the motion of island boundaries of discrete atomic layers is determined by the time evolution of a continuous level-set funciton psi. The adatom concentration is treated in a mean field manner. Thus, fast events (such as diffusion or detachment of adatoms from island boundaries) can be described without extra computational cost. We discuss results for the scaled island size distributions in the submonolayer aggregation regime and compare them to those obtained from atomistic KMC simulations and experiments. The level-set method can naturally be extended to describe multilayer growth. Roughening and coarsening of the surface will be discussed.


ISBN: 0-9708275-7-1
Pages: 764

2015 & Newer Proceedings

Nanotech Conference Proceedings are now published in the TechConnect Briefs

NSTI Online Community