Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Numerics Chapter 7

A Novel Scheme of Mesh Generation from an Arbitrary Topography for MEMS Analysis

Authors: O-S Kwon, S-H Yoon, S-I Yoon, T-S Ha, I-T Yoon and T-Y Won

Affilation: Inha University, Korea

Pages: 408 - 410

Keywords: quantum dot, exciton complex, binding energy

Abstract:
Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charge impurity located on the z axis at a distance from the dot plane are calculated by using the method of few-body physics. This configuration is called a varrier (D+,X) center or a barrier (A-,X) center. The dependences of the binding energy of the ground stat of the barrier (D+,X) and (A-,X) centers on the electron-to-hole mass ratio s and the dot radius R for a few values of the distance d between the fixed positive ion on the z axis and the dot plane are obtained.

A Novel Scheme of Mesh Generation from an Arbitrary Topography for MEMS Analysis

ISBN: 0-9708275-7-1
Pages: 764