Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 7: Numerics
 

A Novel Scheme of Mesh Generation from an Arbitrary Topography for MEMS Analysis

Authors:O-S Kwon, S-H Yoon, S-I Yoon, T-S Ha, I-T Yoon and T-Y Won
Affilation:Inha University, KR
Pages:408 - 410
Keywords:quantum dot, exciton complex, binding energy
Abstract:Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charge impurity located on the z axis at a distance from the dot plane are calculated by using the method of few-body physics. This configuration is called a varrier (D+,X) center or a barrier (A-,X) center. The dependences of the binding energy of the ground stat of the barrier (D+,X) and (A-,X) centers on the electron-to-hole mass ratio s and the dot radius R for a few values of the distance d between the fixed positive ion on the z axis and the dot plane are obtained.
A Novel Scheme of Mesh Generation from an Arbitrary Topography for MEMS AnalysisView PDF of paper
ISBN:0-9708275-7-1
Pages:764
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map