A Novel Scheme of Mesh Generation from an Arbitrary Topography for MEMS Analysis

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 7: Numerics
	A Novel Scheme of Mesh Generation from an Arbitrary Topography for MEMS Analysis
Authors:	O-S Kwon, S-H Yoon, S-I Yoon, T-S Ha, I-T Yoon and T-Y Won
Affilation:	Inha University, KR
Pages:	408 - 410
Keywords:	quantum dot, exciton complex, binding energy
Abstract:	Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charge impurity located on the z axis at a distance from the dot plane are calculated by using the method of few-body physics. This configuration is called a varrier (D+,X) center or a barrier (A-,X) center. The dependences of the binding energy of the ground stat of the barrier (D+,X) and (A-,X) centers on the electron-to-hole mass ratio s and the dot radius R for a few values of the distance d between the fixed positive ion on the z axis and the dot plane are obtained.
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ISBN:	0-9708275-7-1
Pages:	764
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