Authors: Y. Li, K-Y Huang, C-K Chen and C.P. Lee
Affilation: National Nano Device Laboratories, Taiwan
Pages: 376 - 379
Keywords: HBT circuit, RF characteristics, parallel-in-waveform
We present a parallel-in-waveform simulation technique for high frequency heterojunction bipolar transistor (HBT) circuit characterization. On the contrary to the conventional frequency domain analysis, the HBT circuit equations are solved with waveform relaxation and monotone iterative methods in large signal time domain. This approach has been applied to calculate HBT circuit RF output power, the 3rd order inter-modulation and intercept point. The studied unusually high linearity of HBTs’ circuit at ultra high frequency region is quite useful for wireless applications.