Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 5: MEMS Applications and Characterization

Residual Stress Characterization in MEMS Microbridges using Micro-Raman Spectroscopy

Authors:L.A. Starman_Jr., E.M. Ochoa, J.A. Lott, M.S. Amer, W.D. Cowan and J.D. Busbee
Affilation:Air Force Institute of Technology, US
Pages:314 - 317
Keywords:Raman spectroscopy, MEMS, MUMPs, Residual stress, stress characterization
Abstract:We characterize and measure the pre-released residual stress levels in polysilicon Micro-Electro-Mechanical Systems (MEMS) microbridges using micro-Raman spectroscopy. Raman spectroscopy is nondestructive, fast, and provides the potential for in situ stress monitoring during fabrication. Residual stress from the deposition process can have profound affects on the functionality and reliability of MEMS devices. Several post-fabrication processes are available (ion implantation, diffusion, and anneals) which can in°uence the residual stress in thin films. We performed a series of phosphorous implants to quantify the in°uence of doping and anneals on the residual stress levels in MEMS devices. This experiment demonstrates the effective use of Raman spectroscopy to monitor and provide information to help control or in°uence the residual stress in MEMS structures [1-4].
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