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 | Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 5: MEMS Applications and Characterization |
| | RF Measurement Techniques for Micro-Cantilever Characterization and Application | | Authors: | C-H Wang and R.J. Weber | | Affilation: | Iowa State University, USA | | Pages: | 310 - 313 | | Keywords: | MEMS, pull-in voltage, microstrip line, MUMPs | | Abstract: | The reflection coefficient (S11) of a one-port device is most sensitive to its input impedance if a matched condition is obtained. This implies two methods to measure the deflection-induced impedance change for a 1-port device such as micro-cantilever in our case: 1) selecting an operating frequency at which the input impedance is closest to the characteristic impedance of the measurement system; 2) inserting a matching network to obtain a matched condition at a preferred operating frequency. Using the first method, the capacitance change can be measured at various DC bias voltages. Using the second method, the input impedance of a DUT is matched to 50 ohms at a desired frequency. Because of this matched condition, the reflection coefficient is very sensitive to DC bias on a DUT. A 20 dB change of |S11| in 2 Volts range without amplification was obtained. Both methods are quite simple and can be very useful for characterizing the capacitance change for a capacitive sensor and/or sensor application. |  | View paper | | ISBN: | 0-9708275-7-1 |
| Pages: | 764 |
| Hardcopy: | $100.00 |
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