Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 3: System Level Modeling of MEMS
 

Physically-Based Damping Model for Highly Perforated and Largely Deflected Torsional Actuators

Authors:R. Sattler, G. Schrag and G. Wachutka
Affilation:Munich University of Technology, DE
Pages:124 - 127
Keywords:mixed-level modeling, squeeze film damping, system simulation, torsional actuators, highly perforated devices
Abstract:We propose a mixed level simulation scheme for squeeze film damping (SQFD) effects in microdevices, which enables the inclusion of damping effects in system level models of entire microsystems in a natural, physical-based, and flexible way. Our approach allows also for complex geometries and coupling to other energy and signal domains. Applying the methodology to torsional structures yields results which are in excellent agreement with FEM simulations, based on the 3D Navier Stokes equations, thus demonstrating the quality of our approach. For highly perforated structures the number of holes must be reduced by merging of adjacent holes. With a view to deriving scaling laws for this merging procedure, we carried out systematic FEM simulations.
Physically-Based Damping Model for Highly Perforated and Largely Deflected Torsional ActuatorsView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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