Simulation of Manufacturing Variations in a Z-axis CMOS-MEMS Gyroscope

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 3: System Level Modeling of MEMS
	Simulation of Manufacturing Variations in a Z-axis CMOS-MEMS Gyroscope
Authors:	S. Iyer and T. Mukherjee
Affilation:	Carnegie Mellon University, US
Pages:	186 - 189
Keywords:	manufacturing variations, CMOS-MEMS, gyroscope
Abstract:	This paper uses MEMS circuit-level simulation to correlate gyro performance measures such as zero rate output (ZRO), linear acceleration sensitivity (Sa) and cross-axis sensitivity (Sca) to geometrical asymmetries. Elastic and electrostatic asymmetries in the gyroscope may arise due to device-level manufacturing variations in beam width, comb gap and metal mask misalignment in the CMOS-MEMS process. Analytical equations for the non-idealities are derived and compared with the simulation results. The analyses and simulations are used to develop pointers for robust design as well as manufacturing tolerances for limiting nonidealities.
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ISBN:	0-9708275-7-1
Pages:	764
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