Authors: S. Iyer and T. Mukherjee
Affilation: Carnegie Mellon University, United States
Pages: 186 - 189
Keywords: manufacturing variations, CMOS-MEMS, gyroscope
This paper uses MEMS circuit-level simulation to correlate gyro performance measures such as zero rate output (ZRO), linear acceleration sensitivity (Sa) and cross-axis sensitivity (Sca) to geometrical asymmetries. Elastic and electrostatic asymmetries in the gyroscope may arise due to device-level manufacturing variations in beam width, comb gap and metal mask misalignment in the CMOS-MEMS process. Analytical equations for the non-idealities are derived and compared with the simulation results. The analyses and simulations are used to develop pointers for robust design as well as manufacturing tolerances for limiting nonidealities.