Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 3: System Level Modeling of MEMS

Simulation of Manufacturing Variations in a Z-axis CMOS-MEMS Gyroscope

Authors:S. Iyer and T. Mukherjee
Affilation:Carnegie Mellon University, US
Pages:186 - 189
Keywords:manufacturing variations, CMOS-MEMS, gyroscope
Abstract:This paper uses MEMS circuit-level simulation to correlate gyro performance measures such as zero rate output (ZRO), linear acceleration sensitivity (Sa) and cross-axis sensitivity (Sca) to geometrical asymmetries. Elastic and electrostatic asymmetries in the gyroscope may arise due to device-level manufacturing variations in beam width, comb gap and metal mask misalignment in the CMOS-MEMS process. Analytical equations for the non-idealities are derived and compared with the simulation results. The analyses and simulations are used to develop pointers for robust design as well as manufacturing tolerances for limiting nonidealities.
Simulation of Manufacturing Variations in a Z-axis CMOS-MEMS GyroscopeView PDF of paper
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