Static Equivalent Circuit Model for a Capacitive MEMS RF Switch

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 3: System Level Modeling of MEMS
	Static Equivalent Circuit Model for a Capacitive MEMS RF Switch
Authors:	T. Tinttunen, T. Veijola, H. Nieminen, V. Ermolov and T. Ryhanen
Affilation:	Helsinki University of Technology, FI
Pages:	166 - 169
Keywords:	MEMS, RF, capacitive switch, tunable capacitor, equivalent circuit
Abstract:	A simulation model for static analysis of a doubly supported capacitive MEMS RF switch has been constructed using electrical equivalencies. Energy-conserving large-displacement macro models for beam deflection, gap capacitance, electrostatic force, and mechanical contact are utilized. A one-dimensional finite-difference approach is utilized. The model is capable of reproducing the large-displacement beam deflection profile. The static model is verified by comparing APLAC© simulation results with measured CV characteristics. The results show that the model correctly reproduces the CV characteristics, including the performance at contact.
	View PDF of paper
ISBN:	0-9708275-7-1
Pages:	764
Up