Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

System Level Modeling of MEMS Chapter 3

Static Equivalent Circuit Model for a Capacitive MEMS RF Switch

Authors: T. Tinttunen, T. Veijola, H. Nieminen, V. Ermolov and T. Ryhanen

Affilation: Helsinki University of Technology, Finland

Pages: 166 - 169

Keywords: MEMS, RF, capacitive switch, tunable capacitor, equivalent circuit

Abstract:
A simulation model for static analysis of a doubly supported capacitive MEMS RF switch has been constructed using electrical equivalencies. Energy-conserving large-displacement macro models for beam deflection, gap capacitance, electrostatic force, and mechanical contact are utilized. A one-dimensional finite-difference approach is utilized. The model is capable of reproducing the large-displacement beam deflection profile. The static model is verified by comparing APLAC© simulation results with measured CV characteristics. The results show that the model correctly reproduces the CV characteristics, including the performance at contact.

Static Equivalent Circuit Model for a Capacitive MEMS RF Switch

ISBN: 0-9708275-7-1
Pages: 764