Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 3: System Level Modeling of MEMS
 

Static Equivalent Circuit Model for a Capacitive MEMS RF Switch

Authors:T. Tinttunen, T. Veijola, H. Nieminen, V. Ermolov and T. Ryhanen
Affilation:Helsinki University of Technology, FI
Pages:166 - 169
Keywords:MEMS, RF, capacitive switch, tunable capacitor, equivalent circuit
Abstract:A simulation model for static analysis of a doubly supported capacitive MEMS RF switch has been constructed using electrical equivalencies. Energy-conserving large-displacement macro models for beam deflection, gap capacitance, electrostatic force, and mechanical contact are utilized. A one-dimensional finite-difference approach is utilized. The model is capable of reproducing the large-displacement beam deflection profile. The static model is verified by comparing APLAC© simulation results with measured CV characteristics. The results show that the model correctly reproduces the CV characteristics, including the performance at contact.
Static Equivalent Circuit Model for a Capacitive MEMS RF SwitchView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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