Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Compact Modeling Chapter 13

A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling

Authors: L. Larcher and P. Pavan

Affilation: Università di Modena e Reggio Emilia, Italy

Pages: 738 - 741

Keywords: compact modeling, semiconductor device modeling, hot carrier effects, MOSFET, flash memory

Abstract:
This paper presents for the first time a new approach to hot-carrier phenomena leading to an analytical model of both Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) currents. This model can be incorporated in Spice-like models of MOS transistors and Floating Gate (FG) devices to include hot carrier phenomena also in circuit simulations.

A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling

ISBN: 0-9708275-7-1
Pages: 764