Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Compact Modeling Chapter 13

Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application

Authors: S. Fung, P. Su and C. Hu

Affilation: IBM Microelectronics, United States

Pages: 690 - 693

Keywords: SOI, compact model, fully depleted, partially depleted, history effect

Abstract:
The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and FD). The key concept of dynamic depletion will be discussed.

Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application

ISBN: 0-9708275-7-1
Pages: 764