Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application

Fung S., Su P., Hu C.
IBM Microelectronics, US

Keywords: compact model, fully depleted, history effect, partially depleted, SOI

The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and FD). The key concept of dynamic depletion will be discussed.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 690 - 693
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9708275-7-1