Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 13: Compact Modeling
	Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application
Authors:	S. Fung, P. Su and C. Hu
Affilation:	IBM Microelectronics, US
Pages:	690 - 693
Keywords:	SOI, compact model, fully depleted, partially depleted, history effect
Abstract:	The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and FD). The key concept of dynamic depletion will be discussed.
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ISBN:	0-9708275-7-1
Pages:	764
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