Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 13: Compact Modeling
 

Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application

Authors:S. Fung, P. Su and C. Hu
Affilation:IBM Microelectronics, US
Pages:690 - 693
Keywords:SOI, compact model, fully depleted, partially depleted, history effect
Abstract:The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and FD). The key concept of dynamic depletion will be discussed.
Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF ApplicationView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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