Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Compact Modeling Chapter 13

Measurements and Modeling of Mobility in Ultra-Thin SOI

Authors: M. Mastrapasqua, D. Esseni and C. Fiegna

Affilation: Agere Systems, United States

Pages: 734 - 737

Keywords: SOI, mobility, ultra-thin SOI, fully depleted, quantization

We present a study of the effective mobility (ueff) of ultra thin SOI n MOSFETs for both single and double gate operation. Electron mobility was measured for silicon thickness Tsi down to approximately 5 nm using a special test structure able to circumvent parasitic resistance effects. At small inversion density, Ning, the mobility is clearly reduced for decreasing Tsi, due to enhanced phonon scattering in the thin quantum well. However, for double gate operation, DB, we found an improvement in the effective mobility when compared with single gate, SG, operation.

Measurements and Modeling of Mobility in Ultra-Thin SOI

ISBN: 0-9708275-7-1
Pages: 764