Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Compact Modeling Chapter 13

A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs

Authors: J.G. Fossum

Affilation: University of Florida, United States

Pages: 686 - 689

Keywords: physical compact model, predictive circuit simulation, Si MOSFETs, scaled CMOS.

Abstract:
A process/physics-based compact model (UFPDB), unified for PD/SOI and bulk-Si MOSFETs with a single small set of parameters, is overviewed. The utility of UFPDB, e.g., for benchmarking PD/SOI and bulk-Si CMOS and for projecting performances of scaled technologies, is demonstrated via UFPDB/Spice3 device/circuit simulations.

A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs

ISBN: 0-9708275-7-1
Pages: 764