A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 13: Compact Modeling
	A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs
Authors:	J.G. Fossum
Affilation:	University of Florida, US
Pages:	686 - 689
Keywords:	physical compact model, predictive circuit simulation, Si MOSFETs, scaled CMOS.
Abstract:	A process/physics-based compact model (UFPDB), unified for PD/SOI and bulk-Si MOSFETs with a single small set of parameters, is overviewed. The utility of UFPDB, e.g., for benchmarking PD/SOI and bulk-Si CMOS and for projecting performances of scaled technologies, is demonstrated via UFPDB/Spice3 device/circuit simulations.
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ISBN:	0-9708275-7-1
Pages:	764
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