Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Compact Modeling Chapter 13

HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down to Sub-100nm Technologies

Authors: M. Miura-Mattausch, H. Ueno, J.H. Mattausch, S. Kumashiro, T. Yamaguchi, K. Yamashita and N. Nakayama

Affilation: Hiroshima University, Japan

Pages: 678 - 681

Keywords: MOSFET model, surface potential, charge-based modeling, sub-100nm technology

Abstract:
Surface-potential-basedMOSFET modeling is shown to be the right direction. Model parameters reflect the physical device parameters of advanced technologies directly, and can therefore be even scalable with technology changes. These advantages are demonstrated with HiSIM, the first self-consistent surface-potential model for circuit simulation based on the drift-di usion approximation and charge descriptions.

HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down to Sub-100nm Technologies

ISBN: 0-9708275-7-1
Pages: 764