Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 13: Compact Modeling
 

HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down to Sub-100nm Technologies

Authors:M. Miura-Mattausch, H. Ueno, J.H. Mattausch, S. Kumashiro, T. Yamaguchi, K. Yamashita and N. Nakayama
Affilation:Hiroshima University, JP
Pages:678 - 681
Keywords:MOSFET model, surface potential, charge-based modeling, sub-100nm technology
Abstract:Surface-potential-basedMOSFET modeling is shown to be the right direction. Model parameters reflect the physical device parameters of advanced technologies directly, and can therefore be even scalable with technology changes. These advantages are demonstrated with HiSIM, the first self-consistent surface-potential model for circuit simulation based on the drift-di usion approximation and charge descriptions.
HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down to Sub-100nm TechnologiesView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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