The Foundations of the EKV MOS Transistor Charge-Based Model

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 13: Compact Modeling
	The Foundations of the EKV MOS Transistor Charge-Based Model
Authors:	C. Enz, M. Bucher, A.S. Porret, J.M. Sallese and F. Krummenacher
Affilation:	Swiss Center for Electronics and Microtechnology, CH
Pages:	666 - 669
Keywords:	EKV MOS transistor, charge-based model
Abstract:	This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and smallsignal charge-based model that is valid in all modes of inversion, from weak to strong inversion through moderate inversion. The general small-signal model valid in quasistatic and non-quasi-static operation is also presented and all its components are described. It is also shown that the charge-based approach allows to derive the gm/ID characteristic that is valid in all modes of inversion.
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ISBN:	0-9708275-7-1
Pages:	764
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