Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Circuit Simulation Chapter 12

Compact Modeling of Tunneling Breakdown in PN Junctions for Computer-Aided ESD Design (CAD for ESD)

Authors: Y. Subramanian and R.B. Darling

Affilation: University of Washington, United States

Pages: 628 - 631

Keywords: tunneling, compact modeling, ESD, CAD

Abstract:
This paper presents compact, physically-based electrothermal models for direct as well as indirect bandgap tunneling processes in pn-junctions for use in network simulators (e.g. Saber or VHDL-A). The model for indirect tunneling has been validated using a 3.3V Si Zener diode (1N4728). Self-heating effects have also been included. The above tunneling breakdown models, together with the compact models for avalanche breakdown presented previously[1] constitute a complete, compact representation of breakdown in ESD zener diodes. Their utility lies in the simulation of large systems of interconnected ESD structures, without detailed device analysis, permitting a 'CAD-for-ESD' approach in commercial ESD design.

Compact Modeling of Tunneling Breakdown in PN Junctions for Computer-Aided ESD Design (CAD for ESD)

ISBN: 0-9708275-7-1
Pages: 764