Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 12: Circuit Simulation
 

Simulation of Heterojunction Bipolar Transistor with Domain Decomposition Method

Authors:Y. Zhang and P.P. Ruden
Affilation:Oklahoma State University, US
Pages:624 - 627
Keywords:domain decomposition method, HBT, GaN, polarization charge.
Abstract:Domain decomposition method is used in simulation of the band profile and the majority carrier concentration profile of AlGaN/GaN heterojunction bipolar transistors. The method is very stable and efficient. With this method different device structures are designed and the trade-off is discussed.
Simulation of Heterojunction Bipolar Transistor with Domain Decomposition MethodView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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