Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Circuit Simulation Chapter 12

Simulation of Heterojunction Bipolar Transistor with Domain Decomposition Method

Authors: Y. Zhang and P.P. Ruden

Affilation: Oklahoma State University, United States

Pages: 624 - 627

Keywords: domain decomposition method, HBT, GaN, polarization charge.

Abstract:
Domain decomposition method is used in simulation of the band profile and the majority carrier concentration profile of AlGaN/GaN heterojunction bipolar transistors. The method is very stable and efficient. With this method different device structures are designed and the trade-off is discussed.

Simulation of Heterojunction Bipolar Transistor with Domain Decomposition Method

ISBN: 0-9708275-7-1
Pages: 764