 | Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 12: Circuit Simulation |
Simulation of Heterojunction Bipolar Transistor with Domain Decomposition Method | |
| Authors: | Y. Zhang and P.P. Ruden |
| Affilation: | Oklahoma State University, US |
| Pages: | 624 - 627 |
| Keywords: | domain decomposition method, HBT, GaN, polarization charge. |
| Abstract: | Domain decomposition method is used in simulation of the band profile and the majority carrier concentration profile of AlGaN/GaN heterojunction bipolar transistors. The method is very stable and efficient. With this method different device structures are designed and the trade-off is discussed. |
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| ISBN: | 0-9708275-7-1 |
| Pages: | 764 |
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