Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 12: Circuit Simulation
 

Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits

Authors:A. Pacelli, P. Palestri and M. Mastrapasqua
Affilation:State University of New York-Stony Brook, US
Pages:616 - 619
Keywords:bipolar transistors, compact models, device simulation, thermal resistance, self-heating
Abstract:We present three-dimensional heat-transport simulation for bipolar transistors. The simulations are validated on experimental data, and are employed to develop analytical models for the thermal resistance of devices fabricated on bulk and SOI substrate, and with deep-trench isolation. The cross-heating effect in multifinger devices is also modeled.
Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated CircuitsView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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