Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Circuit Simulation Chapter 12

Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits

Authors: A. Pacelli, P. Palestri and M. Mastrapasqua

Affilation: State University of New York-Stony Brook, United States

Pages: 616 - 619

Keywords: bipolar transistors, compact models, device simulation, thermal resistance, self-heating

Abstract:
We present three-dimensional heat-transport simulation for bipolar transistors. The simulations are validated on experimental data, and are employed to develop analytical models for the thermal resistance of devices fabricated on bulk and SOI substrate, and with deep-trench isolation. The cross-heating effect in multifinger devices is also modeled.

Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits

ISBN: 0-9708275-7-1
Pages: 764