The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 11: Semiconductor Device Modeling
	The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs
Authors:	W. McMahon, K. Matsuda, J. Lee, K. Hess and J. Lyding
Affilation:	University of Illinois, US
Pages:	576 - 579
Keywords:	interface state generation, lifetime extrapolation, deuterium
Abstract:	An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed which allows us to explain this effect. A nonlinearity in the drain current vs. device lifetime curve similar to the one predicted by our model has already been observed by the IBM group.
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ISBN:	0-9708275-7-1
Pages:	764
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