Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 11: Semiconductor Device Modeling
 

The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs

Authors:W. McMahon, K. Matsuda, J. Lee, K. Hess and J. Lyding
Affilation:University of Illinois, US
Pages:576 - 579
Keywords:interface state generation, lifetime extrapolation, deuterium
Abstract:An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed which allows us to explain this effect. A nonlinearity in the drain current vs. device lifetime curve similar to the one predicted by our model has already been observed by the IBM group.
The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETsView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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