Authors: W. McMahon, K. Matsuda, J. Lee, K. Hess and J. Lyding
Affilation: University of Illinois, United States
Pages: 576 - 579
Keywords: interface state generation, lifetime extrapolation, deuterium
An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed which allows us to explain this effect. A nonlinearity in the drain current vs. device lifetime curve similar to the one predicted by our model has already been observed by the IBM group.