 | Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 11: Semiconductor Device Modeling |
| | The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs |
| Authors: | W. McMahon, K. Matsuda, J. Lee, K. Hess and J. Lyding |
| Affilation: | University of Illinois, USA |
| Pages: | 576 - 579 |
| Keywords: | interface state generation, lifetime extrapolation, deuterium |
| Abstract: | An isotope effect in the slope of the substrate current versus lifetime requires a model beyond the standard single carrier lucky electron model typically used for MOSFET lifetime extrapolation. A multiple scattering model is developed which allows us to explain this effect. A nonlinearity in the drain current vs. device lifetime curve similar to the one predicted by our model has already been observed by the IBM group. |
 | View paper |
| ISBN: | 0-9708275-7-1 |
| Pages: | 764 |
| Hardcopy: | $100.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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