Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 11: Semiconductor Device Modeling

An Impact Ionization Model Including an Explicit Cold Carrier Population

Authors:T. Grasser, H. Kosina, C. Heitzinger and S. Selberherr
Affilation:TU Vienna, AT
Pages:572 - 575
Keywords:impact ionization modeling, moment equations, BOLTZMANN equation, distribution function model
Abstract:Conventional macroscopic impact ionization models which use the average carrier energy as main parameter cannot accurately describe the phenomenon in modern miniaturized devices. Here we present a new model which is based on an analytic expression for the distribution function. In particular, the distribution function model accounts explicitly for a hot and a cold carrier population in the drain region of MOS transistors. The parameters are determined by three even moments obtained from a solution of a six moments transport model. Together with a nonparabolic description of the density of states accurate closed form macroscopic impact ionization models can be derived based on familiar microscopic descriptions.
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