Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 11

An Impact Ionization Model Including an Explicit Cold Carrier Population

Authors: T. Grasser, H. Kosina, C. Heitzinger and S. Selberherr

Affilation: TU Vienna, Austria

Pages: 572 - 575

Keywords: impact ionization modeling, moment equations, BOLTZMANN equation, distribution function model

Abstract:
Conventional macroscopic impact ionization models which use the average carrier energy as main parameter cannot accurately describe the phenomenon in modern miniaturized devices. Here we present a new model which is based on an analytic expression for the distribution function. In particular, the distribution function model accounts explicitly for a hot and a cold carrier population in the drain region of MOS transistors. The parameters are determined by three even moments obtained from a solution of a six moments transport model. Together with a nonparabolic description of the density of states accurate closed form macroscopic impact ionization models can be derived based on familiar microscopic descriptions.


ISBN: 0-9708275-7-1
Pages: 764

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