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 | Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 11: Semiconductor Device Modeling |
| | An Impact Ionization Model Including an Explicit Cold Carrier Population | | Authors: | T. Grasser, H. Kosina, C. Heitzinger and S. Selberherr | | Affilation: | TU Vienna, Austria | | Pages: | 572 - 575 | | Keywords: | impact ionization modeling, moment equations, BOLTZMANN equation, distribution function model | | Abstract: | Conventional macroscopic impact ionization models which use the average carrier energy as main parameter cannot accurately describe the phenomenon in modern miniaturized devices. Here we present a new model which is based on an analytic expression for the distribution function. In particular, the distribution function model accounts explicitly for a hot and a cold carrier population in the drain region of MOS transistors. The parameters are determined by three even moments obtained from a solution of a six moments transport model. Together with a nonparabolic description of the density of states accurate closed form macroscopic impact ionization models can be derived based on familiar microscopic descriptions. |  | View paper | | ISBN: | 0-9708275-7-1 |
| Pages: | 764 |
| Hardcopy: | $100.00 |
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