Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 11: Semiconductor Device Modeling
	Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination
Authors:	H.P. Felsl and G. Wachutka
Affilation:	Munich University of Technology, DE
Pages:	568 - 571
Keywords:	Silicon Carbide, high power electronics, Schottky diode, breakdown behavior, device simulation
Abstract:	We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination. The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky contact. Furthermore we examined the influence of the effective surface charge of the p-guardring on the breakdown characteristics. Two different methods for determining the breakdown voltage by device simulation were considered to evaluate their ability of predicting the real reverse behavior.
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ISBN:	0-9708275-7-1
Pages:	764
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