Authors: H.P. Felsl and G. Wachutka
Affilation: Munich University of Technology, Germany
Pages: 568 - 571
Keywords: Silicon Carbide, high power electronics, Schottky diode, breakdown behavior, device simulation
We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination. The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky contact. Furthermore we examined the influence of the effective surface charge of the p-guardring on the breakdown characteristics. Two different methods for determining the breakdown voltage by device simulation were considered to evaluate their ability of predicting the real reverse behavior.