 | Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 11: Semiconductor Device Modeling |
| | Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination |
| Authors: | H.P. Felsl and G. Wachutka |
| Affilation: | Munich University of Technology, Germany |
| Pages: | 568 - 571 |
| Keywords: | Silicon Carbide, high power electronics, Schottky diode, breakdown behavior, device simulation |
| Abstract: | We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination. The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky contact. Furthermore we examined the influence of the effective surface charge of the p-guardring on the breakdown characteristics. Two different methods for determining the breakdown voltage by device simulation were considered to evaluate their ability of predicting the real reverse behavior. |
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| ISBN: | 0-9708275-7-1 |
| Pages: | 764 |
| Hardcopy: | $100.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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