Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 11

Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors

Authors: S. Wigger, M. Saraniti, S.M. Goodnick and A Leitenstorfer

Affilation: Arizona State University, United States

Pages: 564 - 567

Keywords: Tera-Hertz radiation, high-field transport, Monte Carlo simulation

Abstract:
Motivated by the recent experimental measurements of Tera-Hertz radiation [1], this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes usinga full-band particlebased simulator. Excellent agreement is found between the experimental and simulated results of the transient acceleration and velocity overshoot effects in GaAs and InP pin diodes due the femto-second optical excitation of carriers.

Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors

ISBN: 0-9708275-7-1
Pages: 764