Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 11: Semiconductor Device Modeling
 

Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors

Authors:S. Wigger, M. Saraniti, S.M. Goodnick and A Leitenstorfer
Affilation:Arizona State University, US
Pages:564 - 567
Keywords:Tera-Hertz radiation, high-field transport, Monte Carlo simulation
Abstract:Motivated by the recent experimental measurements of Tera-Hertz radiation [1], this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes usinga full-band particlebased simulator. Excellent agreement is found between the experimental and simulated results of the transient acceleration and velocity overshoot effects in GaAs and InP pin diodes due the femto-second optical excitation of carriers.
Fullband Particle-Based Simulation of High-Field Transient Transport in III-V SemiconductorsView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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