 | Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 11: Semiconductor Device Modeling |
| | Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors |
| Authors: | S. Wigger, M. Saraniti, S.M. Goodnick and A Leitenstorfer |
| Affilation: | Arizona State University, USA |
| Pages: | 564 - 567 |
| Keywords: | Tera-Hertz radiation, high-field transport, Monte Carlo simulation |
| Abstract: | Motivated by the recent experimental measurements of Tera-Hertz radiation [1], this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes usinga full-band particlebased simulator. Excellent agreement is found between the experimental and simulated results of the transient acceleration and velocity overshoot effects in GaAs and InP pin diodes due the femto-second optical excitation of carriers. |
 | View paper |
| ISBN: | 0-9708275-7-1 |
| Pages: | 764 |
| Hardcopy: | $100.00 |
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