Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 11

The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices

Authors: D. Vasileska, I. Knezevic, R. Akis and D.K. Ferry

Affilation: Arizona State University, United States

Pages: 556 - 559

Keywords: MOSFETs, asymmetric device structures, space-quantization effect, threshold voltage degradation, on-state current degradation

Abstract:
We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quan-tum-mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.


ISBN: 0-9708275-7-1
Pages: 764

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