The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 11: Semiconductor Device Modeling
	The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices
Authors:	D. Vasileska, I. Knezevic, R. Akis and D.K. Ferry
Affilation:	Arizona State University, US
Pages:	556 - 559
Keywords:	MOSFETs, asymmetric device structures, space-quantization effect, threshold voltage degradation, on-state current degradation
Abstract:	We investigate quantum-mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quan-tum-mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.
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ISBN:	0-9708275-7-1
Pages:	764
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