Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 11: Semiconductor Device Modeling
 

2D Analysis of Source-to-Drain Tunneling in Decananometer MOSFETs with the Density-Gradient Model

Authors:A. Schenk and A. Wettstein
Affilation:Swiss Fed. Inst. of Technology, CH
Pages:552 - 555
Keywords:density gradient method, decananometer MOSFETs, deep sub-micron devices, source-to-drain tunneling, TCAD
Abstract:The density gradient method is able to reproduce the quantum-mechanical charge density in CMOS devices. Its ability to describe gate tunneling currents is still a matter of dispute. This paper presents the first 2-dimensional application of the density gradient model to decananometer MOSFETs. By shrinking the effective channel length to zero it is found that the degradation of the sub-threshold swing due to source-to-drain tunneling is weak and nearly independent of the channel length. It is shown that the presence of the abrupt oxide potential barrier pins the height of the source-drain barrier and limits tunneling of the confined electrons in the channel. As a result, thermionic emission determines the off-state current at 300 K even for vanishing channel length. It is concluded that 1D calculations of source-to-drain tunneling are inadequate, since they neglect the dominant influence of the Si-SiO2 potential barrier on the transport in channel direction.
2D Analysis of Source-to-Drain Tunneling in Decananometer MOSFETs with the Density-Gradient ModelView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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