DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 11: Semiconductor Device Modeling
	DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations
Authors:	B. Neinhus, C. Jungemann and B. Meinerzhagen
Affilation:	Universitat Bremen, DE
Pages:	548 - 551
Keywords:	noise, device simulation, impact ionization
Abstract:	An e cient model for the simulation of terminal current noise in the presence of avalanche carrier generation is presented. Our approach is investigated by DD, HD, and MC noise simulations of a 1D N+NN+ structure. A comparison of the terminal current noise evaluated by the 2D HD and DD Langevin equations with full band Monte Carlo simulations exhibits excellent agreement between the MC and HD results.
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ISBN:	0-9708275-7-1
Pages:	764
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