Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 11: Semiconductor Device Modeling
 

DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations

Authors:B. Neinhus, C. Jungemann and B. Meinerzhagen
Affilation:Universitat Bremen, DE
Pages:548 - 551
Keywords:noise, device simulation, impact ionization
Abstract:An e cient model for the simulation of terminal current noise in the presence of avalanche carrier generation is presented. Our approach is investigated by DD, HD, and MC noise simulations of a 1D N+NN+ structure. A comparison of the terminal current noise evaluated by the 2D HD and DD Langevin equations with full band Monte Carlo simulations exhibits excellent agreement between the MC and HD results.
DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC SimulationsView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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