Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 11

DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations

Authors: B. Neinhus, C. Jungemann and B. Meinerzhagen

Affilation: Universitat Bremen, Germany

Pages: 548 - 551

Keywords: noise, device simulation, impact ionization

Abstract:
An e cient model for the simulation of terminal current noise in the presence of avalanche carrier generation is presented. Our approach is investigated by DD, HD, and MC noise simulations of a 1D N+NN+ structure. A comparison of the terminal current noise evaluated by the 2D HD and DD Langevin equations with full band Monte Carlo simulations exhibits excellent agreement between the MC and HD results.

DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations

ISBN: 0-9708275-7-1
Pages: 764