Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 11

The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision

Authors: M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu and M.D. Giles

Affilation: TU Vienna, Austria

Pages: 544 - 547

Keywords: silicon on insulator, body effect, hydrodynamic transport model, BOLTZMANN equation, device simulation

Abstract:
An anomalous output characteristics is observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not present in drift-diffusion simulations and its occurance in measurements is questionable. An explanation of the cause of this effect is given, and a solution is proposed by modifying the hydrodynamic transport model.

The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision

ISBN: 0-9708275-7-1
Pages: 764