Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 11: Semiconductor Device Modeling
 

The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision

Authors:M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu and M.D. Giles
Affilation:TU Vienna, AT
Pages:544 - 547
Keywords:silicon on insulator, body effect, hydrodynamic transport model, BOLTZMANN equation, device simulation
Abstract:An anomalous output characteristics is observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not present in drift-diffusion simulations and its occurance in measurements is questionable. An explanation of the cause of this effect is given, and a solution is proposed by modifying the hydrodynamic transport model.
The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its RevisionView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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