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 | Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 11: Semiconductor Device Modeling |
| | The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision | | Authors: | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu and M.D. Giles | | Affilation: | TU Vienna, Austria | | Pages: | 544 - 547 | | Keywords: | silicon on insulator, body effect, hydrodynamic transport model, BOLTZMANN equation, device simulation | | Abstract: | An anomalous output characteristics is observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not present in drift-diffusion simulations and its occurance in measurements is questionable. An explanation of the cause of this effect is given, and a solution is proposed by modifying the hydrodynamic transport model. |  | View paper | | ISBN: | 0-9708275-7-1 |
| Pages: | 764 |
| Hardcopy: | $100.00 |
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