Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 11

A Comprehensive Modeling of MOS Transistors in a 0.35um Technology for Analog and Digital Applications

Authors: A. Keshavarz, P. Khare and R. Sampson

Affilation: STMicroelectronics, United States

Pages: 604 - 607

Keywords: MOS modeling, 0.35um MOS transistor, temperature effects in MOS transistors

Abstract:
The purpose of this work is to present a comprehensive report of the MOS transistor characteristics in a 0.35um technology, both types being surface devices. Results include extensive geometrical and temperature dependencies of the most important transistor parameters needed for all applications specially the Analog. N and PMOS threshold voltage, saturation current, maximum transconductance, as well as the output resistance in saturation and linear region were the selected parameters for this investigation. Graphical results show accurate dependency of each of these parameters on geometry and temperature.


ISBN: 0-9708275-7-1
Pages: 764

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