Study of Electron Transport in SOI MOSFETs using Monte Carlo Technique with Full-Band Modeling

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 11: Semiconductor Device Modeling
	Study of Electron Transport in SOI MOSFETs using Monte Carlo Technique with Full-Band Modeling
Authors:	H. Takeda, N. Mori and C. Hamaguchi
Affilation:	Osaka University, JP
Pages:	596 - 599
Keywords:	SOI MOSFET, pseudo-potential method, Monte Carlo simulation, non-parabolicity
Abstract:	In SOI MOSFETs, electrons are quantized into two-dimensional electron gas by the strong electric field normal to the interface. When the Si-layer thickness is thinner than the inversion layer width, the confinement becomes stronger and effects of the non-parabolicity of the Si band structure will significantly influence the two-dimensional electronic states. We studied effects of the non-parabolicity on the electronic states in SOI MOS-FETs with such an ultra-thin Si-layer by using an empirical pseudo-potential method and analyzed the electron transport properties by performing single-electron Monte Carlo simulations.
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ISBN:	0-9708275-7-1
Pages:	764
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