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 | Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 11: Semiconductor Device Modeling |
| | Study of Electron Transport in SOI MOSFETs using Monte Carlo Technique with Full-Band Modeling | | Authors: | H. Takeda, N. Mori and C. Hamaguchi | | Affilation: | Osaka University, Japan | | Pages: | 596 - 599 | | Keywords: | SOI MOSFET, pseudo-potential method, Monte Carlo simulation, non-parabolicity | | Abstract: | In SOI MOSFETs, electrons are quantized into two-dimensional electron gas by the strong electric field normal to the interface. When the Si-layer thickness is thinner than the inversion layer width, the confinement becomes stronger and effects of the non-parabolicity of the Si band structure will significantly influence the two-dimensional electronic states. We studied effects of the non-parabolicity on the electronic states in SOI MOS-FETs with such an ultra-thin Si-layer by using an empirical pseudo-potential method and analyzed the electron transport properties by performing single-electron Monte Carlo simulations. |  | View paper | | ISBN: | 0-9708275-7-1 |
| Pages: | 764 |
| Hardcopy: | $100.00 |
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