Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 11

Study of Electron Transport in SOI MOSFETs using Monte Carlo Technique with Full-Band Modeling

Authors: H. Takeda, N. Mori and C. Hamaguchi

Affilation: Osaka University, Japan

Pages: 596 - 599

Keywords: SOI MOSFET, pseudo-potential method, Monte Carlo simulation, non-parabolicity

Abstract:
In SOI MOSFETs, electrons are quantized into two-dimensional electron gas by the strong electric field normal to the interface. When the Si-layer thickness is thinner than the inversion layer width, the confinement becomes stronger and effects of the non-parabolicity of the Si band structure will significantly influence the two-dimensional electronic states. We studied effects of the non-parabolicity on the electronic states in SOI MOS-FETs with such an ultra-thin Si-layer by using an empirical pseudo-potential method and analyzed the electron transport properties by performing single-electron Monte Carlo simulations.


ISBN: 0-9708275-7-1
Pages: 764

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