Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 11: Semiconductor Device Modeling
 

An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content

Authors:L.B. Sipahi and T.J. Sanders
Affilation:Florida Institute of Technology, US
Pages:588 - 591
Keywords:modeling, simulation and statistical design of RF ICs, LNA, wireless communications, SiGe HBT, Germanium content
Abstract:Although silicon is by far the most widely utilized manufactured semiconductor material, it is very poor in terms of mobilities of holes and electrons, which give rise to unacceptable low operation speeds. Far higher charge-carrier mobilities and saturation velocities have been found in III-V compound materials, for instance GaAs, AlGaAs, and InP. The project undertaken has utilized a novel methodology to achieve enhanced circuit designs using a multiple statistical simulation approach. This methodology has been described in detail elsewhere [1]. The goal of this project is to extend this methodology to characterize SiGe HBTs and elucidate their dependence on germanium content.
An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium ContentView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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