Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 11: Semiconductor Device Modeling
 

Two-Dimensional Simulation of Surface-State Effects on Breakdown Characteristics of Narrowly-Recessed-Gate GaAs MESFETs

Authors:Y. Mitani, A. Wakabayashi and K. Horio
Affilation:Shibaura Institute of Technology, JP
Pages:580 - 583
Keywords:GaAs MESFET, surface state, breakdown characteristics, recessed-gate structure, 2D simulation
Abstract:Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.
Two-Dimensional Simulation of Surface-State Effects on Breakdown Characteristics of Narrowly-Recessed-Gate GaAs MESFETsView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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