Authors: Y. Mitani, A. Wakabayashi and K. Horio
Affilation: Shibaura Institute of Technology, Japan
Pages: 580 - 583
Keywords: GaAs MESFET, surface state, breakdown characteristics, recessed-gate structure, 2D simulation
Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.