Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 11

Two-Dimensional Simulation of Surface-State Effects on Breakdown Characteristics of Narrowly-Recessed-Gate GaAs MESFETs

Authors: Y. Mitani, A. Wakabayashi and K. Horio

Affilation: Shibaura Institute of Technology, Japan

Pages: 580 - 583

Keywords: GaAs MESFET, surface state, breakdown characteristics, recessed-gate structure, 2D simulation

Abstract:
Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is suggested that in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered by introducing a narrowly-recessed-gate structure.

Two-Dimensional Simulation of Surface-State Effects on Breakdown Characteristics of Narrowly-Recessed-Gate GaAs MESFETs

ISBN: 0-9708275-7-1
Pages: 764