 | Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 11: Semiconductor Device Modeling |
| - | The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision |
| | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu and M.D. Giles |
| | TU Vienna, Austria |
| - | DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations |
| | B. Neinhus, C. Jungemann and B. Meinerzhagen |
| | Universitat Bremen, Germany |
| - | 2D Analysis of Source-to-Drain Tunneling in Decananometer MOSFETs with the Density-Gradient Model |
| | A. Schenk and A. Wettstein |
| | Swiss Fed. Inst. of Technology, Switzerland |
| - | The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices |
| | D. Vasileska, I. Knezevic, R. Akis and D.K. Ferry |
| | Arizona State University, USA |
| - | Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling |
| | A. Gehring, T. Grasser and S. Selberherr |
| | TU Vienna, Austria |
| - | Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors |
| | S. Wigger, M. Saraniti, S.M. Goodnick and A Leitenstorfer |
| | Arizona State University, USA |
| - | Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination |
| | H.P. Felsl and G. Wachutka |
| | Munich University of Technology, Germany |
| - | An Impact Ionization Model Including an Explicit Cold Carrier Population |
| | T. Grasser, H. Kosina, C. Heitzinger and S. Selberherr |
| | TU Vienna, Austria |
| - | The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs |
| | W. McMahon, K. Matsuda, J. Lee, K. Hess and J. Lyding |
| | University of Illinois, USA |
| - | Two-Dimensional Simulation of Surface-State Effects on Breakdown Characteristics of Narrowly-Recessed-Gate GaAs MESFETs |
| | Y. Mitani, A. Wakabayashi and K. Horio |
| | Shibaura Institute of Technology, Japan |
| - | Modeling, Simulation and Comparative Analysis of RF Bipolar and MOS Low Noise Amplifiers for Determining Their Performance Dependence on Silicon Processing |
| | L.B. Sipahi and T.J. Sanders |
| | Florida Institute of Technology, USA |
| - | An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content |
| | L.B. Sipahi and T.J. Sanders |
| | Florida Institute of Technology, USA |
| - | A New Lateral Trench Sidewall Schottky (LTSS) Rectifier on SOI |
| | Y. Singh and M.J. Kumar |
| | Indian Institute of Technology, India |
| - | Study of Electron Transport in SOI MOSFETs using Monte Carlo Technique with Full-Band Modeling |
| | H. Takeda, N. Mori and C. Hamaguchi |
| | Osaka University, Japan |
| - | Capacitance-Voltage Characteristics of Metal-Oxide-Strained Semiconductor Si/SiGe Heterostructures |
| | N. Cavassilas and J-L Autran |
| | CNRS, France |
| - | A Comprehensive Modeling of MOS Transistors in a 0.35um Technology for Analog and Digital Applications |
| | A. Keshavarz, P. Khare and R. Sampson |
| | STMicroelectronics, USA |
| ISBN: | 0-9708275-7-1 |
| Pages: | 764 |
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