Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Chapter 11:

Semiconductor Device Modeling

-The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision
 M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu and M.D. Giles
 TU Vienna, AT
-DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations
 B. Neinhus, C. Jungemann and B. Meinerzhagen
 Universitat Bremen, DE
-2D Analysis of Source-to-Drain Tunneling in Decananometer MOSFETs with the Density-Gradient Model
 A. Schenk and A. Wettstein
 Swiss Fed. Inst. of Technology, CH
-The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices
 D. Vasileska, I. Knezevic, R. Akis and D.K. Ferry
 Arizona State University, US
-Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling
 A. Gehring, T. Grasser and S. Selberherr
 TU Vienna, AT
-Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors
 S. Wigger, M. Saraniti, S.M. Goodnick and A Leitenstorfer
 Arizona State University, US
-Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination
 H.P. Felsl and G. Wachutka
 Munich University of Technology, DE
-An Impact Ionization Model Including an Explicit Cold Carrier Population
 T. Grasser, H. Kosina, C. Heitzinger and S. Selberherr
 TU Vienna, AT
-The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs
 W. McMahon, K. Matsuda, J. Lee, K. Hess and J. Lyding
 University of Illinois, US
-Two-Dimensional Simulation of Surface-State Effects on Breakdown Characteristics of Narrowly-Recessed-Gate GaAs MESFETs
 Y. Mitani, A. Wakabayashi and K. Horio
 Shibaura Institute of Technology, JP
-Modeling, Simulation and Comparative Analysis of RF Bipolar and MOS Low Noise Amplifiers for Determining Their Performance Dependence on Silicon Processing
 L.B. Sipahi and T.J. Sanders
 Florida Institute of Technology, US
-An Investigation on Modeling and Statistical Simulation of Si-Ge Heterojunction Bipolar Transistors for Characterizing Their Dependence on Germanium Content
 L.B. Sipahi and T.J. Sanders
 Florida Institute of Technology, US
-A New Lateral Trench Sidewall Schottky (LTSS) Rectifier on SOI
 Y. Singh and M.J. Kumar
 Indian Institute of Technology, IN
-Study of Electron Transport in SOI MOSFETs using Monte Carlo Technique with Full-Band Modeling
 H. Takeda, N. Mori and C. Hamaguchi
 Osaka University, JP
-Capacitance-Voltage Characteristics of Metal-Oxide-Strained Semiconductor Si/SiGe Heterostructures
 N. Cavassilas and J-L Autran
 CNRS, FR
-A Comprehensive Modeling of MOS Transistors in a 0.35um Technology for Analog and Digital Applications
 A. Keshavarz, P. Khare and R. Sampson
 STMicroelectronics, US
ISBN:0-9708275-7-1
Pages:764
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