Binding Energy of an Exciton Bound to a Charged Impurity in Quantum Dots

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 10: Quantum Effects, Quantum Devices and Spintronics
	Binding Energy of an Exciton Bound to a Charged Impurity in Quantum Dots
Authors:	W. Xie
Affilation:	Guangzhou University, CN
Pages:	532 - 535
Keywords:	quantumn dot, exciton complex, biding energy
Abstract:	Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charged impurity located on the z axis at a distance from the dot plane are calculated using the method of few-body physics. This configuration is called a barrier (D+,X) center or a barrier (A-,X) center. The dependences of the binding energy of the ground state of the barrier (D+,X) and (A-,X) centers on the electron-to-hole mass ratio s and the dot radius R for a few values of the distance d between the fixed positive ion on the z axis and the dot plane are obtained.
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ISBN:	0-9708275-7-1
Pages:	764
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