Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Quantum Effects, Quantum Devices and Spintronics Chapter 10

Binding Energy of an Exciton Bound to a Charged Impurity in Quantum Dots

Authors: W. Xie

Affilation: Guangzhou University, China

Pages: 532 - 535

Keywords: quantumn dot, exciton complex, biding energy

Abstract:
Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charged impurity located on the z axis at a distance from the dot plane are calculated using the method of few-body physics. This configuration is called a barrier (D+,X) center or a barrier (A-,X) center. The dependences of the binding energy of the ground state of the barrier (D+,X) and (A-,X) centers on the electron-to-hole mass ratio s and the dot radius R for a few values of the distance d between the fixed positive ion on the z axis and the dot plane are obtained.

Binding Energy of an Exciton Bound to a Charged Impurity in Quantum Dots

ISBN: 0-9708275-7-1
Pages: 764