Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Chapter 10: Quantum Effects, Quantum Devices and Spintronics

Quantum Effects in SOI Devices

Authors:S.S. Ahmed, R. Akis and D. Vasileska
Affilation:Arizona State University, US
Pages:518 - 521
Keywords:SOI devices, narrow channel effect, effective potential, Landauer’s formalism
Abstract:Quantum effects have been reported to play an important role in the operation of narrow width SOI devices, in which the carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. Typical method to simulate these effects is a simultaneous solution of the Schrödinger and Poisson equations, which can be a very time consuming procedure. An alternative way is to use the recently developed effective potential approach that takes into account the natural non-zero size of an electron wave packet in the quantized system. In this work, we have applied the effective potential approach in a recently proposed SOI device structure to quantify these effects. In a second effort we utilize the Landauer’s formalism to calculate the on-state current quantum mechanically and estimate the increase in device threshold voltage due to the lateral quantization.
Quantum Effects in SOI DevicesView PDF of paper
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map