Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Quantum Effects, Quantum Devices and Spintronics Chapter 10

Modelling Coupled Motion of Electrons in Quantum Dots with Wetting Layers

Authors: R.V.N. Melnik and M. Willatzen

Affilation: University of Southern Denmark, Denmark

Pages: 506 - 509

Keywords: quantum dots with wetting layers, envelope functions

Abstract:
The influence of wettin-layer states on quantum-dot states and vice-versa is examined numerically employing a one-band model for electroncs in the conduction band. This problem corresponds to the case where a few monolayer InAs grown on GaAs(100) oriented substrates leads to self-assembly of quantum dots with wetting layers as is known experimentally. It is shown that the quantum-dot ground state of the combined structure is considerably affected by the presence of the wetting layer, and similarly, wetting-layer states are affected by the presence of the quantum dot. This quantum dot/wetting layer state interference is expected t have an impact on carrier-capture phenomena and operation speeds of electronic and optical devices using quantum dots as active regions.

Modelling Coupled Motion of Electrons in Quantum Dots with Wetting Layers

ISBN: 0-9708275-7-1
Pages: 764