Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Quantum Effects, Quantum Devices and Spintronics Chapter 10

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

Authors: C. Le Royer, G. Le Carval, M. Sanquer and D. Fraboulet

Affilation: CEA-LET, France

Pages: 502 - 505

Keywords: modeling, simulation, nanocrystal memory, double tunnel junction, quantum confinement

Abstract:
For optimization of Quantum-Dot-based Multi Tunnel Junction Memory (MTJM) [1], we propose an original compact model validated by physical simulations. We analyze the impact of physical and technological parameters (Temperature, dots density, geometries…) on writing and retention characteristics of the MTJM cell, and so we show that this concept could be an alternative for Advanced DRAM Applications (for the 50 nm node predicted around 2011 by ITRS).

Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory

ISBN: 0-9708275-7-1
Pages: 764