Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 10: Quantum Effects, Quantum Devices and Spintronics
 

Computer Simulation of Electron Energy States for Three-Dimensional InAs/GaAs Semiconductor Quantum Rings

Authors:Y. Li, O. Voskoboynikov and C.P. Lee
Affilation:National Nano Device Laboratories, TW
Pages:540 - 543
Keywords:semiconductor quantum ring, InAs/GaAs, electronic state, computer simulation
Abstract:In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, (iii) the finite hard wall confinement potential, and (iv) the Ben Daniel-Duke boundary conditions. We solve the 3D model by nonlinear iterative algorithm to obtain self-consistent solutions. The model and simulation provide a novel way to calculate the energy levels of nano-scopic semiconductor quantum ring. They are useful to clarify the principal dependencies of quantum ring energy states on material band parameter, ring size and shape.
Computer Simulation of Electron Energy States for Three-Dimensional InAs/GaAs Semiconductor Quantum RingsView PDF of paper
ISBN:0-9708275-7-1
Pages:764
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