Computer Simulation of Electron Energy States for Three-Dimensional InAs/GaAs Semiconductor Quantum Rings

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 10: Quantum Effects, Quantum Devices and Spintronics
	Computer Simulation of Electron Energy States for Three-Dimensional InAs/GaAs Semiconductor Quantum Rings
Authors:	Y. Li, O. Voskoboynikov and C.P. Lee
Affilation:	National Nano Device Laboratories, TW
Pages:	540 - 543
Keywords:	semiconductor quantum ring, InAs/GaAs, electronic state, computer simulation
Abstract:	In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, (iii) the finite hard wall confinement potential, and (iv) the Ben Daniel-Duke boundary conditions. We solve the 3D model by nonlinear iterative algorithm to obtain self-consistent solutions. The model and simulation provide a novel way to calculate the energy levels of nano-scopic semiconductor quantum ring. They are useful to clarify the principal dependencies of quantum ring energy states on material band parameter, ring size and shape.
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ISBN:	0-9708275-7-1
Pages:	764
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