The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

	Nanotech 2002 Vol. 1 Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems Chapter 10: Quantum Effects, Quantum Devices and Spintronics
	The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs
Authors:	M. Lundstrom and J.H. Rhew
Affilation:	Purdue University, US
Pages:	486 - 489
Keywords:	MOSFET, transistor, ballistic transport, nanoelectronics
Abstract:	A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory of the ballistic MOSFET is discussed, and finally, the role of scattering in nano-scale MOSFETs is discussed.
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ISBN:	0-9708275-7-1
Pages:	764
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