Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Quantum Effects, Quantum Devices and Spintronics Chapter 10

The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

Authors: M. Lundstrom and J.H. Rhew

Affilation: Purdue University, United States

Pages: 486 - 489

Keywords: MOSFET, transistor, ballistic transport, nanoelectronics

Abstract:
A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory of the ballistic MOSFET is discussed, and finally, the role of scattering in nano-scale MOSFETs is discussed.

The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

ISBN: 0-9708275-7-1
Pages: 764