Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems

Quantum Effects, Quantum Devices and Spintronics Chapter 10

The Use of a Green's Function Formalism for the Simulation of Semiconductor Device Performance

Authors: D. Jovanovic

Affilation: Motorola, United States

Pages: 478 - 481

Keywords: quantum transport, non-equilibrium Green functions, Kadanoff-Baym, device simulation, MOSFET

Abstract:
Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on Motorola's effort at building a quantum transport device simulator suitable for the predictive quantum-mechanical simulation of MOSFETs beyond the Leff = 100 nm technology-node.

The Use of a Green's Function Formalism for the Simulation of Semiconductor Device Performance

ISBN: 0-9708275-7-1
Pages: 764