Nano Science and Technology Institute
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 1
Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
 
Chapter 10: Quantum Effects, Quantum Devices and Spintronics
 

The Use of a Green's Function Formalism for the Simulation of Semiconductor Device Performance

Authors:D. Jovanovic
Affilation:Motorola, US
Pages:478 - 481
Keywords:quantum transport, non-equilibrium Green functions, Kadanoff-Baym, device simulation, MOSFET
Abstract:Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on Motorola's effort at building a quantum transport device simulator suitable for the predictive quantum-mechanical simulation of MOSFETs beyond the Leff = 100 nm technology-node.
The Use of a Green's Function Formalism for the Simulation of Semiconductor Device PerformanceView PDF of paper
ISBN:0-9708275-7-1
Pages:764
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map