Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 1
Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems

Process Modeling Chapter 9

Modeling of Deposition Process by Level Set Method

Authors: H. Jung, O. Kwon, S. Yoon and T. Won

Affilation: Inha University, Korea

Pages: 422 - 425

Keywords: level set method, process simulation, modeling

In this paper, we report a novel method for effectively reducing the amount of calculation for a deposition rate at a specific level-set node. The proposed algorithm makes it possible to reduce the number of level-set nodes for the same accuracy and convergence. Furthermore, the total CPU time for simulating the surface evolution on the wafer during the plasma deposition process has been reduced approximately by one-ninth of the required CPU time with comparison to the traditional level-set method. The increased number of level-set nodes with closer grid spacing is generally required for the representation of a curved surface such as a contact hole for multi-level interconnections. However, the CPU time for the level-set calculation of the speed function F increases by O(n2) as we increase the node density by O(n).

Modeling of Deposition Process by Level Set Method

ISBN: 0-9708275-0-4
Pages: 638